CHARACTERISTICS OF ISLAND GROWTH OF HG1-XCDXTE ON (100)CDTE SUBSTRATES BY CHEMICAL-VAPOR TRANSPORT

Authors
GE YR WIEDEMEIER H
Citation
Yr. Ge et H. Wiedemeier, CHARACTERISTICS OF ISLAND GROWTH OF HG1-XCDXTE ON (100)CDTE SUBSTRATES BY CHEMICAL-VAPOR TRANSPORT, Journal of electronic materials, 25(7), 1996, pp. 1067-1071
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
25
Issue
7
Year of publication
1996
Pages
1067 - 1071
Database
ISI
SICI code
0361-5235(1996)25:7<1067:COIGOH>2.0.ZU;2-9
Abstract
The characteristics of island growth of Hg1-xCdxTe (MCT) by chemical v apor transport on (100) CdTe substrates have been studied, for the fir st time, by optical microscopy, by infrared transmission spectroscopy, and by chemical etching. Nonuniformities of the growth thickness, of the growth rate, and of the composition of islands are observed. Based on the experimental results, the origin and the inhibition of island growth of MCT on (100) CdTe substrates are discussed.