HIGH THERMOELECTRIC FIGURES OF MERIT IN PBTE QUANTUM-WELLS

Authors
HARMAN TC SPEARS DL MANFRA MJ
Citation
Tc. Harman et al., HIGH THERMOELECTRIC FIGURES OF MERIT IN PBTE QUANTUM-WELLS, Journal of electronic materials, 25(7), 1996, pp. 1121-1127
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
25
Issue
7
Year of publication
1996
Pages
1121 - 1127
Database
ISI
SICI code
0361-5235(1996)25:7<1121:HTFOMI>2.0.ZU;2-L
Abstract
High-quality Pb1-xEuxTe/PbTe multiple quantum wells (MQWs) have been g rown by molecular beam epitaxy. The measured 300K thermoelectric prope rties have been compared with that of the best bulk PbTe. This experim ental investigation is the first detailed study of MQW structures desi gned to improve ZT of thermoelectric materials and has resulted in a b reakthrough in the decades-long ZT congruent to 1 barrier for a room-t emperature thermoelectric material. A value of Z(2D)T > 1.2 has been a chieved for these PbTe quantum wells.