GROWTH AND ELECTRICAL-PROPERTIES OF PBTE EPITAXIAL LAYERS GROWN BY TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR-PRESSURE LIQUID-PHASE EPITAXY

Temperature difference method under controlled vapor pressure (TDM-CVP ) liquid phase epitaxy has been applied to the growth of PbTe using Pb solvent and with applied Te vapor pressure. Epitaxial layers with a g ood morphology were obtained with a growth temperature (T-g) ranging f rom 410 to 700 degrees C. Growth thickness as a function of growth tim e, subsidiary heater power, and growth temperature are measured and an alyzed. All the unintentionally doped epitaxial layers are n-type. The carrier concentrations of the epitaxial layers become minimum at a Te pressure of 4 x 10(-4)-5 x 10(-4) Torr for T-g = 560 degrees C and 0. 9 x 10(-3)-1 x 10(-3) Torr for T-g = 600 degrees C.