GROWTH AND CHARACTERIZATION OF GALLIUM SELENIDE CRYSTALS FOR FAR-INFRARED CONVERSION APPLICATIONS

Authors
SINGH NB HENNINGSEN T BALAKRISHNA V SUHRE DR FERNELIUS N HOPKINS FK ZELMON DE
Citation
Nb. Singh et al., GROWTH AND CHARACTERIZATION OF GALLIUM SELENIDE CRYSTALS FOR FAR-INFRARED CONVERSION APPLICATIONS, Journal of crystal growth, 163(4), 1996, pp. 398-402
Citations number
6
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
163
Issue
4
Year of publication
1996
Pages
398 - 402
Database
ISI
SICI code
0022-0248(1996)163:4<398:GACOGS>2.0.ZU;2-J
Abstract
We have developed a method to synthesize large batch sizes of GaSe and have grown single crystals by the Bridgman method. Our results show a d value of 75 pV/m for GaSe. GaSe crystals were tested at a fluence o f 1.6 J/cm(2) and 140 MW/cm(2) without damage. The 2 mm thick crystal was used in a high-power test where a crystal with an AR coating was a ble to operate at 30 kHz with an average power of 21 W into the crysta l, equivalent to 32 kW/cm(2) CW in a 100 mu m spot.