THERMAL EFFECTS AND KINETICS IN STEP-FLOW CRYSTAL-GROWTH OF ALPHA-HGI2

In the present paper a step-flow problem accounting for adsorption and sublimation heat releases coupled with conductive heat transfer into the substrate is considered for the {110} vicinal face of alpha-HgI2 c rystal vapor growth. The crystal growth of alpha-HgI2 on the {110} fac e proceeds under the combined control of (i) a high coverage factor (s imilar to 0.75-0.95), (ii) surface diffusion, (iii) thermally activate d incorporation kinetics and (iv) thermal effects of adsorption and in corporation heats released in the vicinity of the steps coupled with c onductive heat transfer through the growing crystal. It is shown that the sequence of steps moving across the crystal face produces a sequen ce of temperature waves with the amplitudes of 0.04 to 0.06 K. When th e crystal thickness is small enough (less than similar to 300 mu m), t he temperature fields of neighboring steps do not interfere, thus the steps are thermally isolated. However, when the crystal thickness is s ufficiently large, the temperature field on the terraces becomes the s uperposition of thermal effects resulting from the whole sequence of s teps.