SILICON SURFACE PASSIVATION BY METAL LAYERS FOR LOW-TEMPERATURE EPITAXY

A novel surface passivation technique permits low-temperature homoepit axy of Si above the stability limit (450 degrees C) of a conventional hydrogen passivation. An evaporated metal film replaces the hydrogen p assivation by a more stable metal layer and thus allows for epitaxial growth up to 570 degrees C. Our passivation by a metal layer (PAMELA) technique is particularly suitable for liquid phase epitaxy.