STUDY OF 1 F NOISE IN INP GROWN BY CBE

Authors
CHEN XY LEYS MR
Citation
Xy. Chen et Mr. Leys, STUDY OF 1 F NOISE IN INP GROWN BY CBE, Solid-state electronics, 39(8), 1996, pp. 1149-1153
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
39
Issue
8
Year of publication
1996
Pages
1149 - 1153
Database
ISI
SICI code
0038-1101(1996)39:8<1149:SO1FNI>2.0.ZU;2-P
Abstract
The origin of low-frequency noise in InP was studied experimentally by measuring the noise of InP layers grown by chemical beam epitaxy (CBE ). Such InP layers are unintentionally doped, but of varying purity an d always of n-type conductivity. We performed noise measurements at te mperatures from 77 to 300 K. Our results at 77 and 300 K prove that th e mobility noise is exclusively due to the lattice scattering. The noi se in InP is well characterized by a parameter alpha(Latt), which equa ls 3 x 10(-3) at 300 K and 2.3 x 10(-3) at 77 K. Copyright (C) 1996 El sevier Science Ltd