A NEW LIFETIME CHARACTERIZATION TECHNIQUE USING DRAIN CURRENT TRANSIENTS IN SOI MATERIAL

Authors
IONESCU AM CRISTOLOVEANU S MUNTEANU D ELEWA T GRI M
Citation
Am. Ionescu et al., A NEW LIFETIME CHARACTERIZATION TECHNIQUE USING DRAIN CURRENT TRANSIENTS IN SOI MATERIAL, Solid-state electronics, 39(12), 1996, pp. 1753-1755
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
39
Issue
12
Year of publication
1996
Pages
1753 - 1755
Database
ISI
SICI code
0038-1101(1996)39:12<1753:ANLCTU>2.0.ZU;2-1
Abstract
A new technique based on the transient operation of the pseudo-MOS tra nsistor is proposed for direct evaluation of generation lifetime and s urface velocity in SOI wafers. The main advantages of the proposed tec hnique are: (i) in situ operation (no prior processing ofa transistor) , (ii) set-up simplicity, (iii) fast comparison of different SOI techn ologies and (iv) simple identification of Si-film conductivity type. T he influence of the electrical and non-electrical parameters of this t echnique is systematically investigated. Various SOI wafers (SIMOX and UNIBOND) are compared. Copyright (C) 1996 Elsevier Science Ltd