QUANTUM-WELL ALGAAS HETEROSTRUCTURES GROWN BY LOW-TEMPERATURE LIQUID-PHASE EPITAXY

Authors
ANDREEV VM KAZANTSEV AB KHVOSTIKOV VP PALEEVA EV RUMYANTSEV VD SOROKINA SV
Citation
Vm. Andreev et al., QUANTUM-WELL ALGAAS HETEROSTRUCTURES GROWN BY LOW-TEMPERATURE LIQUID-PHASE EPITAXY, Materials chemistry and physics, 45(2), 1996, pp. 130-135
Citations number
6
Categorie Soggetti
Material Science
Journal title
Materials chemistry and physics → ACNP
ISSN journal
02540584
Volume
45
Issue
2
Year of publication
1996
Pages
130 - 135
Database
ISI
SICI code
0254-0584(1996)45:2<130:QAHGBL>2.0.ZU;2-Q
Abstract
An investigation of the low-temperature liquid-phase epitaxy (LT LPE) process at 400-650 degrees C for crystallization of AlGaAs heterostruc tures with ultrathin (2-100 nm) layers has been carried out. Tn partic ular, low-threshold quantum-well heterolasers (threshold current densi ty j(th) as low as 120 A cm(-2)) and high-efficiency solar cells (effi ciency as high as 24.0-24.7% under AMO conditions at concentration rat io 20-100x) have been fabricated by LT LPE.