A LUMINESCENCE STUDY OF DEFECTS AND INTERNAL STRAINS IN ION-IMPLANTEDSILICON-ON-SAPPHIRE FILMS

Authors
MUDRYI AV PATUK AI SHAKIN IA KORSHUNOV FP ZUEV VA
Citation
Av. Mudryi et al., A LUMINESCENCE STUDY OF DEFECTS AND INTERNAL STRAINS IN ION-IMPLANTEDSILICON-ON-SAPPHIRE FILMS, Materials chemistry and physics, 45(2), 1996, pp. 185-188
Citations number
8
Categorie Soggetti
Material Science
Journal title
Materials chemistry and physics → ACNP
ISSN journal
02540584
Volume
45
Issue
2
Year of publication
1996
Pages
185 - 188
Database
ISI
SICI code
0254-0584(1996)45:2<185:ALSODA>2.0.ZU;2-M
Abstract
Low-temperature photoluminescence (4.2 and 35 K) has been used to stud y the defects created by high-energy particle irradiation (gamma rays, electrons, ions) of silicon on sapphire (SOS) films. It was found tha t the noble gas atoms implanted into silicon layers take an active par t in the processes of interaction with radiation damage. Data on the t emperature stability of luminescence centres are given. The residual c ompressive stress in SOS films is estimated using the photoluminescenc e method.