A DETAILED TIME-OF-FLIGHT STUDY OF THE CRACKING PATTERN OF TRIMETHYLGALLIUM - IMPLICATIONS FOR MOMBE GROWTH

Citation
O. Naji et al., A DETAILED TIME-OF-FLIGHT STUDY OF THE CRACKING PATTERN OF TRIMETHYLGALLIUM - IMPLICATIONS FOR MOMBE GROWTH, Journal of crystal growth, 164(1-4), 1996, pp. 58-65
Citations number
12
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
164
Issue
1-4
Year of publication
1996
Pages
58 - 65
Database
ISI
SICI code
0022-0248(1996)164:1-4<58:ADTSOT>2.0.ZU;2-F
Abstract
Time of flight measurements of trimethylgallium (TMGa) have been used to obtain detailed information regarding the effect of mass spectrosco pic detection on organometallic molecules, under ultra high vacuum. Th e technique adopted allows the determination of ''cracking patterns'' for all species, trimethylgallium, dimethylgallium (DMGa) and monometh ylgallium (MMGa), derived from the parent molecule. This information h as important significance for in situ modulated beam mass spectroscopy (MBMS) growth studies of GaAs from this precursor.