A COMPARISON OF RHEED RECONSTRUCTION PHASES ON (100)INAS, GAAS AND INP

We have begun to compile a list of the surface reconstructions for (00 1) InAs, GaAs and InP. The symmetries that we have observed include 1 x 1, 2 x 1, 2 x 4, 4 x 6, 3 x 4, 4 x 3, 2 x 3, 3 x 3, 1 x 3, 3 x 1, 3 x 2, 4 x 1 and 8 x 2, These reconstructions were observed during vario us growth and non-growth conditions in order to make up phase diagrams that depend on the group V and III fluxes and the temperature. Some o f the phase boundaries can serve as temperature reference points in ou r epitaxy machine. A comparison of the different semiconductor surface s is made and the growth properties of these surfaces are discussed.