III-N LIGHT-EMITTING-DIODES FABRICATED USING RF NITROGEN GAS-SOURCE MBE

Homo- acid heterojunction III-N light emitting diodes using RF atomic nitrogen plasma molecular beam epitaxy have been grown. GaN films depo sited on sapphire using this growth technique exhibited an extremely s harp X-ray diffraction with a full width half maximum of 112 are sec. p-type doping of the nitride films was done with elemental Mg and resu lted in as-grown p-type material with resistivities as low as 2 Omega . cm. Both homo- and heterojunction LEDs showed clear rectification. E mission from the GaN homojunction deposited on n-type SIC was peaked a t 410 nm while the AIGaN-GaN(Zn)-AlGaN double heterojunction LEDs emis sion was centered about 520 nm.