GROWTH-STUDIES OF GAP ON SI BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

Authors
Citation
Wg. Bi et al., GROWTH-STUDIES OF GAP ON SI BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 164(1-4), 1996, pp. 256-262
Citations number
9
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
164
Issue
1-4
Year of publication
1996
Pages
256 - 262
Database
ISI
SICI code
0022-0248(1996)164:1-4<256:GOGOSB>2.0.ZU;2-S
Abstract
We report a growth study of Gap films grown by gas-source molecular be am epitaxy on Si substrates oriented 4 degrees off (100) toward [110]. Reflection high-energy electron diffraction (RHEED), high-resolution X-ray diffraction rocking curve (XRC), and scanning electron microscop y (SEM) were used to characterize material quality. Growth studies wer e carried out in terms of the growth temperature, V/III ratio, and Gap film thickness. Two different growth methods were used: one-step dire ct growth and two-step growth, i.e. a thin GaP layer is grown first at a relatively low temperature as a buffer layer, followed by the main GaP layer grown at the normal growth temperature. The results show tha t with the two-step growth, the material quality of Gap can be greatly improved. Investigation of the effect of using different prelayers (A s-2, P-2, Al, Ga, and Ga + Al) on the quality of GaP films reveals tha t the Ga prelayer gives the best result. By optimizing the growth cond itions, GaP films with very smooth surfaces were obtained.