STRAIN BALANCED GAP GAAS/INP/GAAS SUPERLATTICES - STRUCTURAL AND ELECTRONIC-PROPERTIES/

We have previously reported the growth of highly mismatched InP/GaAs a nd GaP/GaAs heterostructures, In this work, we address the structural and electronic properties of chemical beam epitaxy (CBE) grown GaP/GaA s/InP/GaAs short period superlattices. We present a thorough crystallo graphic and optical study, using high resolution X-ray diffraction (HR XRD), transmission electron microscopy (TEM), photoluminescence spectr oscopy (Pi,) and excitation photoluminescence (PLE). The realization o f high quality pseudomorphic structures presenting up to 100 periods i s shown. The global strain in these superlattices ranges from -1.5 to +5.0 kbar and translates into a noticeable modification of their elect ronic properties.