BEAM GEOMETRICAL EFFECTS ON PLANAR SELECTIVE-AREA EPITAXY OF INP GAINAS HETEROSTRUCTURES/

This communication reports on the lateral growth at planar selective a rea epitaxy (SAE) grown vertical sidewall ridge structures. This later al growth is investigated as a function of the angle of the molecular beam with respect to the substrate surface, the width of the mask and the ridge size. The results prove that for molecular beams arriving pe rpendicularly to the substrate surface the lateral growth is about hal f compared to the conventional geometry, This enables the planar embed ded growth of heterostructures as used in integrated device approaches using identical growth parameters as in the planar SAE.