SELECTIVE-AREA CHEMICAL BEAM EPITAXY FOR BUTT-COUPLING INTEGRATION

Different techniques are used to realize optoelectronic integration. W e particularly study non-planar selective area chemical beam epitaxy u sing a dielectric film as a mask. We first improve the pre-epitaxial t echnological process to reduce the threshold of selective growth tempe rature for both InP and GaInAsP (1.15 mu m) materials, The characteriz ation of the selective growth uniformity in thickness and in compositi on (for the alloys) gives excellent results. Moreover, the shape of th e cross-sectional profile war the edges of a selectively grown InP/GaI nAsP/InP double heterostructure appears to be promising for butt-coupl ing integration. Finally, this work is applied to the precise determin ation of butt-coupling efficiency between two waveguides, one being se lectively grown.