CHEMICAL BEAM EPITAXY ON PATTERNED SUBSTRATES OF INGAAS INP HETEROSTRUCTURES FOR OPTOELECTRONICS AND NANOSTRUCTURES APPLICATIONS/

In this work we focus our attention on the growth and development of l ow Miller index faces on patterned InP substrates for the InGaAs/InP s ystem. In particular, we present an extensive study about the dependen ce of growth rate and facet development on the key parameters of chemi cal beam epitaxy (CBE) growth. The main results obtained on ridge stru ctures, V-grooves and reverse-mesa channels are reported and discussed as a function of growth temperature and V/III ratio. Moreover, we des cribe a simple measurement procedure for both hydride and metalorganic fluxes, not involving conventional ionisation methods.