TELLURIUM DOPING OF INP USING TRIISOPROPYLINDIUM-DIISOPROPYLTELLURIUM(TIPIN-DIPTE)

Triisopropylindium-diisopropyltellurium (TrPIn-DIPTe) has been investi gated as an alternative n-type dopant for InP. TIPIn-DIPTe was used to provide n-type doping in InP with electron concentrations as high as 1.4 x 10(20) cm(-3). The Te concentration was found to be linear with TIPIn-DIPTe flux. Increasing V/III ratio was found to decrease Te inco rporation. Good electrical activation was obtained for all growth cond itions. The Te was found to surface segregate during growth at tempera tures above 450 degrees C. However, growth temperatures below 450 degr ees C show excellent interfacial abruptness over a range of doping con centrations.