FIRST EPITAXIAL INP TUNNEL-JUNCTIONS GROWN BY CHEMICAL BEAM EPITAXY

We report, for the first time, an epitaxially grown InP p(+)/n(++) tun nel junction. A diode with peak current densities up to 1600 A/cm(2) a nd maximum specific resistivities (V-p/I-p peak voltage to peak curren t ratio) in the range of 10(-4) Omega . cm(2) is obtained. This peak c urrent density is comparable to the highest results previously reporte d for lattice-matched In0.53Ga0.47As tunnel junctions. Both results we re obtained using chemical beam epitaxy (CBE). In this paper we discus s the electrical characteristics of these tunnel diodes and how the gr owth conditions influence them.