DEFECT ANALYSIS IN LELY-GROWN 6H SIC

Citation
M. Tuominen et al., DEFECT ANALYSIS IN LELY-GROWN 6H SIC, Journal of crystal growth, 165(3), 1996, pp. 233-244
Citations number
27
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
165
Issue
3
Year of publication
1996
Pages
233 - 244
Database
ISI
SICI code
0022-0248(1996)165:3<233:DAIL6S>2.0.ZU;2-L
Abstract
Two Lely-grown 6H polytype SiC platelets were investigated in terms of their crystalline quality and defect characteristics, Synchrotron X-r ay topography, along with optical microscopy and high-resolution X-ray diffractometry were used as characterization techniques. In the first platelet a distorted area where the nucleation has started was observ ed. It consists of micropipes and a complex network of the Frank-Read dislocation loops. Their Burgers vectors were completely determined by X-ray topographic analysis. Outside the distorted area the only large defects observed were dislocations with a low density (in the order o f 10(2) cm(-2)) and few stacking faults. The quality of this platelet has improved during the growth. The second platelet was found to be of an excellent crystalline quality. It does not contain micropipes or s tacking faults and its dislocation density is very low (about 30 cm(-2 )). The rocking curve widths (FWHM) of both samples were very narrow ( from 5.8 '' to 8.3 ''). Possible relationships between the observed de fects and their formation mechanisms in the growth processes are discu ssed.