GROWTH OF EPITAXIAL COSI2 FILMS ON STRAINED SI1-XGEX SI(001) HETEROSTRUCTURES/

Thin epitaxial films of CoSi2 have been grown on strained Si1-xGex/Si( 001) heterostructures with Ge contents between 20 and 25 at% by molecu lar beam epitaxy (MBE). Single-oriented CoSi2(001) films of high cryst alline quality (chi(min) = 4.6%) and smooth surface morphology with lo w resistivities (17 mu Omega . cm) could be obtained using a special t emplate method and an additional thin silicon sacrificial cap layer on top of the Si1-xGex/Si(001) heterostructure. The films were character ized using RHEED, LEED, in-situ AES, SIMS, RES, SEM, TEM and sheet res istance measurements. The results are compared with films grown on mer e Si(001) substrates and on Si1-xGex/Si(001) heterostructures grown wi thout the use of a silicon cap layer. It is demonstrated that a silico n sacrificial cap layer is essential for the growth of high-quality si ngle-domain CoSi2(001) films on Si1-xGex/Si(100) heterostructures.