HOT-WALL EPITAXY-GROWN N-PBTE(100) P-SI(100) HETEROJUNCTION/

In this paper, the epitaxial growth of PbTe on Si(100) substrates in o rder to obtain an n-PbTe(100)/p-Si(100) heterojunction with a simplifi ed hot wall epitaxy apparatus and the characterization of this heteroj unction are reported for the first time. The single crystallinity of t he PbTe epilayer was confirmed by its X-ray diffraction spectrum. The current-voltage curve revealed that the heterojunction had good rectif ication characteristics. The capacitance-voltage was employed to get t he built-in potential of the heterojunction.