CLASSIFICATION OF MORPHOLOGICAL DEFECTS ON GAAS ALASSB/GASB STRUCTURES PREPARED BY MBE/

Authors
SRNANEK R NEMETH S KOVAC J KICIN S GRIETENS B BORGHS G NOVAK J SESTAKOVA V PEKAREK L
Citation
R. Srnanek et al., CLASSIFICATION OF MORPHOLOGICAL DEFECTS ON GAAS ALASSB/GASB STRUCTURES PREPARED BY MBE/, Journal of crystal growth, 165(1-2), 1996, pp. 156-158
Citations number
9
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
165
Issue
1-2
Year of publication
1996
Pages
156 - 158
Database
ISI
SICI code
0022-0248(1996)165:1-2<156:COMDOG>2.0.ZU;2-D
Abstract
Surface defects on GaAs/AlAsSb/GaSb structures were investigated by in terference microscopy and X-ray microprobe analysis and then classifie d. Wet chemical etching in HCl was used to define their structure. It was found that there are four representative groups of these defects. Their density was between 390 and 700 cm(-2).