VARIOUS METHODS FOR THE GROWTH OF GASB SINGLE-CRYSTALS

Various methods for the growth of GaSb single crystals have been tried . It has been found that the oxidation of the GaSb surface and the low vapor pressure of GaSb material are main problems. For this reason th e Czochralski method without encapsulant in a flow of very pure hydrog en seems to be the most suitable technique. Other tested methods have not been acceptable for several reasons (the economic point of view, q uality of the crystals, highly complicated equipment, etc.). The Czoch ralski technique with the use of hydrogen reduces the formation of the oxide layer and makes it possible to grow fully single crystalline, h igh-quality GaSb with low dislocation density(< 10(2) cm(-2)).