EPITAXIAL-GROWTH OF (110) DYFE2, TBFE2, AND DY0.7TB0.3FE2 THIN-FILMS BY MOLECULAR-BEAM EPITAXY

Citation
V. Oderno et al., EPITAXIAL-GROWTH OF (110) DYFE2, TBFE2, AND DY0.7TB0.3FE2 THIN-FILMS BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 165(1-2), 1996, pp. 175-178
Citations number
5
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
165
Issue
1-2
Year of publication
1996
Pages
175 - 178
Database
ISI
SICI code
0022-0248(1996)165:1-2<175:EO(DTA>2.0.ZU;2-5
Abstract
We present the first epitaxial growth of some (110) ran earth-Fe-2 (Dy Fe2, TbFe2 and Dy0.7Tb0.3Fe2 known as terfenol-D) thin films on(110)Nb /(<11(2)over bar 0>) sapphire by molecular beam epitaxy. The epitaxy i s initiated by the deposition of a thin layer of iron on niobium. The structures are investigated by RHEED and X-ray scattering. Depending o n the thermal treatment of the iron thin layer, the films of RE-Fe-2, epitaxially grown on it, are either single crystals or present twins r elated by a 110 degrees rotation about the surface normal. The growth of epitaxial thin films of these compounds is of interest because of t he magnetic and magnetostrictive properties these materials may exhibi t.