PULSED-LASER DEPOSITION OF C-ORIENTED LINBO3 LITAO3 OPTICAL WAVE-GUIDING BILAYERED FILMS ON SILICON-WAFERS/

LiNbO3(LN)/LiTaO3(LT) bilayered films were grown on a p-type Si(lll) w afer coated with a SiO2 buffer by a pulsed laser deposition (PLD) tech nique. The XPS measurement showed that the stoichiometries of the LN a nd LT films were in good agreement with the target materials. The crys tallinity of the as-grown films was analysed by XRD, which indicated t hat LN and LT were highly c-oriented while the SiO2 buffer was amorpho us. The surface of the as-grown films was mirror-like, dense and crack -free; no large droplets were observed by scanning electron microscope (SEM). The thicknesses of the LN, LT and SiO2 films were about 960, 3 60 and 1800 nm, respectively. The interface between the LN and LT film s was sharp. The X-ray energy dispersive spectrometer (XREDS) analysis to the different areas of the LN film showed that there was no variat ion of composition with depth. The optical waveguiding properties of t he films were demonstrated by a prism coupler method.