FREESTANDING ALGAAS THERMOPILES FOR IMPROVED INFRARED-SENSOR DESIGN

Authors
DEHE A HARTNAGEL HL
Citation
A. Dehe et Hl. Hartnagel, FREESTANDING ALGAAS THERMOPILES FOR IMPROVED INFRARED-SENSOR DESIGN, I.E.E.E. transactions on electron devices, 43(8), 1996, pp. 1193-1199
Citations number
22
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
43
Issue
8
Year of publication
1996
Pages
1193 - 1199
Database
ISI
SICI code
0018-9383(1996)43:8<1193:FATFII>2.0.ZU;2-6
Abstract
Our group introduced the GaAs/AlGaAs material system for various integ rated and micromachined thermoelectric sensors [1]-[6]. Investigating the material parameters of AlxGa1-xAs in detail indicates that this ma terial system can be optimized with respect to thermoelectric properti es, We demonstrate that figures of merit Z as high as 1.4 x 10(-4) K-1 are predicted. Simultaneously, this material is compatible for microm achining purposes. The presented infrared sensor is optimized with res pect to the material parameter and design. The sensors do not need a s upporting membrane and hence undesirable parallel thermal conductance is reduced. Sensors of different geometrical dimensions have been fabr icated and compared. Black body measurements result in responsivities up to R = 365 V/W and maximum relative detectivities of D = 6.9 x 10( 8) cm root Hz/W which compare to the predicted performance.