LEAKAGE CURRENT MECHANISM IN SUBMICRON POLYSILICON THIN-FILM TRANSISTORS

Authors
OLASUPO KR HATALIS MK
Citation
Kr. Olasupo et Mk. Hatalis, LEAKAGE CURRENT MECHANISM IN SUBMICRON POLYSILICON THIN-FILM TRANSISTORS, I.E.E.E. transactions on electron devices, 43(8), 1996, pp. 1218-1223
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
43
Issue
8
Year of publication
1996
Pages
1218 - 1223
Database
ISI
SICI code
0018-9383(1996)43:8<1218:LCMISP>2.0.ZU;2-G
Abstract
We have studied leakage current in sub-micron p-channel polysilicon th in-film-transistor. Our study revealed that thermionic emission is the dominant mechanism at low drain bias (-0.1 V) while thermionic field emission dominate at moderately high drain bias. At high drain bias (> -5.0 V), tunneling was observed to be the dominant leakage mechanism.