UNIFIED PHYSICAL I-V MODEL INCLUDING SELF-HEATING EFFECT FOR FULLY DEPLETED SOI MOSFETS/

A physically based analytical I-V model that includes self-heating eff ect (SHE) is presented for fully depleted SOI/MOSFET's. The incorporat ion of SHE is done self-consistently in a fully closed form, making th e model very suitable for use in circuit simulators. The model also ac counts for the drain induced conductivity enhancement (DICE) and drain induced barrier lowering (DIBL), channel length modulation (CLM), as well as parasitic series resistances (PSR). Another advantage is the u nified form of the model that allows us to describe the subthreshold, the near-threshold and the above-threshold regimes of operation in one continuous expression, A continuous transition of current and conduct ance from the linear to the saturation regimes is also assured, The mo del shows good agreement with measured data for a wide range of channe l lengths (down to 0.28 mu m) and film thicknesses (94 mn-162 nm).