Dr. Greenberg et Ja. Delalamo, NONLINEAR SOURCE AND DRAIN RESISTANCE IN RECESSED-GATE HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS, I.E.E.E. transactions on electron devices, 43(8), 1996, pp. 1304-1306
We have profiled the parasitic source and drain resistances versus cur
rent in recessed-gate HFET's with heavily-doped caps, using an InAlAs/
n(+)-InP HFET as a vehicle, We observe a dramatic reduction in the par
asitic resistances at moderate-to-high currents as significant current
passes through the cap, Consequently, we note very little dependence
in g(m) on the length of the extrinsic gate-source region. This is an
experimental verification of predictions of two-layer models in the li
terature.