NITROGEN DOPING OF ZNSE WITH TRIMETHYLSILYLAZIDE, TRIALLYLAMINE OR BISDITRIMETHYLSILYLAMIDOZINC DURING METALORGANIC VAPOR-PHASE EPITAXY

Several nitrogen precursors without nitrogen hydrogen bonds were teste d to dope ZnSe in a MOVPE process. Bisditrimethylsilylamidozinc (ZnBTM ), trimethylsilylazide (TMSiN) and triallylamine (TAN) were used to gr ow ZnSe:N with ditertiarybutylselenide (DTBSe), diisopropylselenide (D IPSe) and dimethylzinc-triethylamine (DMZn-TEN) at growth temperatures between 340 and 420 degrees C. The samples were analysed by photolumi nescence (PL), current-voltage (I-V), capacitance-voltage (C-V) and Ha ll measurements, The dependence of nitrogen incorporation and electric al activation on growth temperature, VI/II ratio and dopant flow were investigated. In the PL spectra of the layers grown with TMSiN an inte nse bound-exciton emission, correlated to Zn vacancies is observed, be sides the I-1(N) emission line for high dopant flows. The samples grow n with ZnBTM and TAN as precursors exhibit a broadening of the exciton ic emissions and a shift towards the energetic position of the I-1(N) emission line for increasing nitrogen incorporation in the layers. The intensity of the excitonic emissions in comparison to the donor-accep tor pair emissions remains dominating. Although Hall measurements of s everal samples doped with ZnBTM and TAN indicate p-type conductivity, the analysis of the C-V and I-V measurements shows the n-type or semi- insulating character of the samples.