ESD ISSUES FOR ADVANCED CMOS TECHNOLOGIES

Authors
DUVVURY C AMERASEKERA A
Citation
C. Duvvury et A. Amerasekera, ESD ISSUES FOR ADVANCED CMOS TECHNOLOGIES, Microelectronics and reliability, 36(7-8), 1996, pp. 907-924
Citations number
25
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
36
Issue
7-8
Year of publication
1996
Pages
907 - 924
Database
ISI
SICI code
0026-2714(1996)36:7-8<907:EIFACT>2.0.ZU;2-B
Abstract
As technologies advance towards the deep submicron, the ESD protection design issues have been known to become more critical. This paper exa mines the recent trends in ESD protection designs, the technology impa ct, and the specific approaches to build-in ESD reliability. It is sho wn that the efficient performance of advanced protection designs requi res an optimised process that can meet the ESD robustness criterion. C opyright (C) 1996 Elsevier Science Ltd.