THE EVOLUTION OF THE MICROSCOPIC DAMAGE IN ELECTROMIGRATION STUDIED BY MULTIPLE ELECTRICAL MEASUREMENTS

Authors
JONES BK XU YZ ZOBBI P
Citation
Bk. Jones et al., THE EVOLUTION OF THE MICROSCOPIC DAMAGE IN ELECTROMIGRATION STUDIED BY MULTIPLE ELECTRICAL MEASUREMENTS, Microelectronics and reliability, 36(7-8), 1996, pp. 1051-1062
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
36
Issue
7-8
Year of publication
1996
Pages
1051 - 1062
Database
ISI
SICI code
0026-2714(1996)36:7-8<1051:TEOTMD>2.0.ZU;2-D
Abstract
Continuous measurements of the changes in resistance,and a.c. Joule he ating effects during electromigration are analysed and interpreted to reveal details of the microscopic degradation during both the main par t of the process and the void formation and healing effects in the fin al stages of failure. Copyright (C) 1996 Elsevier Science Ltd.