DIAGNOSTICS OF THE QUALITY OF MOSFETS

The excess noise behaviour of silicided p-channel MOSFETs is investiga ted. Due to contact problems, generation-recombination noise spectra a re observed. Analysis of the current noise spectra versus the current on a single device, showed that the generation-recombination noise was due to trapping of carriers in the source and drain contacts. An anal ysis of an L-array is not necessary to distinguish between channel and contact contribution. The classical geometry and current dependence o f the noise is no longer valid if the noise in the series resistance i s dominant. Large generation-recombination noise components, with the dependence S-I proportional to 14, point to poor device contact qualit y. Copyright (C) 1996 Elsevier Science Ltd.