STATISTICAL SIMULATION OF IC TECHNOLOGY - A BIPOLAR PROCESS EXAMPLE

Statistical simulation using design of experiments has been employed f or integrated circuit technology development. A software program calle d STADIUM was developed to implement this statistical methodology. The software has been designed to be user friendly and to guide the engin eer who is not a statistics expert through the process of deriving a v alid statistical answer. Inputs to the STADIUM system include integrat ed circuit fabrication variations and when coupled with semiconductor process and device simulators can estimate the expected variations of device parameters such as transistor gain and threshold voltage. This paper presents the detailed procedure and results of a statistical sim ulation of a bipolar transistor technology. Copyright (C) 1996 Elsevie r Science Ltd