Statistical simulation using design of experiments has been employed f
or integrated circuit technology development. A software program calle
d STADIUM was developed to implement this statistical methodology. The
software has been designed to be user friendly and to guide the engin
eer who is not a statistics expert through the process of deriving a v
alid statistical answer. Inputs to the STADIUM system include integrat
ed circuit fabrication variations and when coupled with semiconductor
process and device simulators can estimate the expected variations of
device parameters such as transistor gain and threshold voltage. This
paper presents the detailed procedure and results of a statistical sim
ulation of a bipolar transistor technology. Copyright (C) 1996 Elsevie
r Science Ltd