HALL EFFECT AND THERMALLY STIMULATED CONDUCTIVITY IN CDGEP2 CRYSTALS

Authors
GUBANOVA AA KRYSKOV TA SODEIKA AS
Citation
Aa. Gubanova et al., HALL EFFECT AND THERMALLY STIMULATED CONDUCTIVITY IN CDGEP2 CRYSTALS, Inorganic materials, 32(7), 1996, pp. 702-704
Citations number
11
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
32
Issue
7
Year of publication
1996
Pages
702 - 704
Database
ISI
SICI code
0020-1685(1996)32:7<702:HEATSC>2.0.ZU;2-J
Abstract
Based on measurements of the Hall effect and thermally stimulated curr ents, the energy levels of electroactive centers in p-CdGeP2 crystals were found to be E(A1) = E(v) + (0.12 +/- 0.02) eV and E(A1) = E(v) (0.20 +/- 0.02) eV for low-resistivity samples and E(A) = E(v) + (0.65 +/- 0.02) eV for high-resistivity samples. The energy levels of noneq uilibrium carrier traps were found to be E(t) = E(v) + (0.07 +/- 0.02) eV for low-resistivity samples and E(t1) = E(v) + (0.21 + 0.02) eV an d E(t2) = E(v) + (0.37 + 0.02) eV for high-resistivity samples.