MONOLITHIC INTEGRATION OF A 94-GHZ ALGAAS GAAS 2-DEG MIXER ON QUARTZ SUBSTRATE BY EPITAXIAL LIFT-OFF/

Authors
BASCO R PRABHU A YNGVESSON KS LAU KM
Citation
R. Basco et al., MONOLITHIC INTEGRATION OF A 94-GHZ ALGAAS GAAS 2-DEG MIXER ON QUARTZ SUBSTRATE BY EPITAXIAL LIFT-OFF/, I.E.E.E. transactions on electron devices, 44(1), 1997, pp. 11-16
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
44
Issue
1
Year of publication
1997
Pages
11 - 16
Database
ISI
SICI code
0018-9383(1997)44:1<11:MIOA9A>2.0.ZU;2-1
Abstract
In this paper, we report the integration of an AlGaAs/GaAs two-dimensi onal electron gas (2-DEG) bolometric mixer and a quartz-based microstr ip circuit using the epitaxial lift-off (ELO) technique. The 1 mu m th ick high-mobility 2-DEG device transplanted on quartz showed no sign o f degradation resulting from the ELO process. The 2-DEG mixer fabricat ion procedure demonstrated here is advantageous for its simplicity and uncritical choice of substrate. We obtained a minimum intrinsic conve rsion loss of 17 dB at 94 GHz at liquid nitrogen temperature. The meas ured IF bandwidth of the mixer was greater than 3 GHz.