AN INTEGRATED PIN MISS OEIC FOR HIGH-CURRENT PHOTORECEIVER APPLICATIONS/

A new PIN/IMISS photoreceiver with very high output current has been d eveloped by using the combination of an amorphous silicon germanium al loy PIN photodiode and a metal-insulator-semiconductor switch (MISS) d evice. The developed photoreceiver uses a PM photodiode as the light a bsorption structure and light wavelength selector and the MISS device as an actuator to drive an electronic load. Based on the experimental results, the photoreceiver yields a very high output current of 3.2 mA at a voltage bias of 6 V under an incident light power of P-in = 100 mu W, and has a rise time of 465 mu s with a load resistance of R = 1 k Ohm. The peak response wavelength of the PIN photodiode is at 905 nm , i.e., infrared light. Thus the high output current PIN/MISS photorec eiver is a good candidate for some specific applications.