INTERNAL-STRESS AND ELASTIC-MODULUS MEASUREMENTS ON MICROMACHINED 3C-SIC THIN-FILMS

Citation
M. Mehregany et al., INTERNAL-STRESS AND ELASTIC-MODULUS MEASUREMENTS ON MICROMACHINED 3C-SIC THIN-FILMS, I.E.E.E. transactions on electron devices, 44(1), 1997, pp. 74-79
Citations number
31
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189383
Volume
44
Issue
1
Year of publication
1997
Pages
74 - 79
Database
ISI
SICI code
0018-9383(1997)44:1<74:IAEMOM>2.0.ZU;2-5
Abstract
Fabrication of epitaxial 3C-SiC microstructures by bulk micromachining of the underlying silicon substrate was investigated. Initial studies of the mechanical properties of epitaxial 3C-SiC films deposited on s ilicon were carried out on microstructures fabricated by bulk micromac hining of the silicon substrate to evaluate the potential of these fil ms for micromechanics. Residual stress and biaxial modulus of 3C-SiC f ilms were measured by load-deflection measurements of suspended diaphr agms. The film's residual stress was tensile with an average of 212 MP a, while the in-plane biaxial modulus averaged 441 GPa.