We show that the effects of synchrotron radiation (SR) on Al chemical
vapor deposition (CVD) is clearly different depending on whether core
or valence electrons are excited. When high-energy photons are used to
excite the core electrons, aluminum growth on a Si surface is effecti
vely suppressed, and thus negative projection patterning is clearly ac
hieved. On the other hand, when low-energy photons, which can only exc
ite valence electrons, are utilized, growth initiation occurs on the S
iO2 surface. Chemical shift analysis is performed using Auger electron
spectroscopy. The results reveal that aluminum carbide is formed on t
he high-energy photon-irradiated Si surface, while metallic aluminum i
s formed on the low-energy photon-irradiated SiO2 surface. The clear d
ifference in CVD characteristics when core/valence electrons are excit
ed is discussed based on the changes in surface chemistry caused by su
rface photochemical reaction.