NOVEL DRY-ETCHING TECHNIQUE USING VUV LIGHT-INDUCED SURFACE-REACTIONS

We have examined new etching methods using vacuum ultraviolet (VUV) li ght for application to fabrication of semiconductor devices. We have s uccessfully carried out highly selective and highly anisotropic etchin g of silicon dioxide using anhydrous HF as an etching gas. We also obt ained fine 0.1 mu m Si patterns using photo-ionized CF3 + ion etching. We carried out the low-temperature removal of native-oxide on Si(100) for very low-temperature homoepitaxy. We have explained the character istics of VUV light-induced surface reactions on semiconductor materia l.