REACTOR MODELING FOR RADIO-FREQUENCY PLASMA DEPOSITION OF SINXHY - COMPARISON BETWEEN 2 REACTOR DESIGNS

Citation
H. Caquineau et al., REACTOR MODELING FOR RADIO-FREQUENCY PLASMA DEPOSITION OF SINXHY - COMPARISON BETWEEN 2 REACTOR DESIGNS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2071-2082
Citations number
18
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
ISSN journal
07342101
Volume
14
Issue
4
Year of publication
1996
Pages
2071 - 2082
Database
ISI
SICI code
0734-2101(1996)14:4<2071:RMFRPD>2.0.ZU;2-H
Abstract
Plasma deposition processes involve complex phenomena which make the d esign and optimization of industrial equipments difficult. In the part icular case of silane-ammonia plasmas to produce silicon nitride (at v ery low silane percentage), two flow arrangements, i.e., (i) a longitu dinal flow reactor and (ii) an axisymmetric showerhead electrode react or were studied by two-dimensional modeling of momentum and mass trans port. First, a kinetic scheme which enables us to reproduce experiment al results for both reactor configurations was selected enlightening a n unusual behavior of Si(NH2)(3) radicals. Then, the way silane is con sumed and its consequences on active species production was outlined a s playing the leading parts in the processes. As silane concentration decreases along the flow direction, the modeling of the longitudinal f low reactor shows a steep decrease of the deposition rate and a signif icant composition variation of the deposit. In the axisymmetric reacto r, the film thickness and composition uniformities considerably improv e due to the distributed gas feed. (C) 1996 American Vacuum Society.