Jq. Zhang et al., CHARACTERIZATION OF HELICON WAVE PLASMA DESIGNED FOR DIRECT-CURRENT SPUTTERING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2163-2168
Citations number
17
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
The rf plasma produced in a helicon wave frequency range was studied u
sing helical antennas and its application to de sputtering at low Ar p
ressures was reported. A dense plasma of the order of 10(12)-10(13) cm
(-3) could be obtained at a pressure around 0.1 Pa by using the antenn
as with azimuthal mode number of m=+/-1 or m=0. The measurement of the
axial magnetic component B-z of the rf held in the plasma showed evid
ence of the excitation of helicon wave. A sputtering apparatus has bee
n developed by means of the helicon wave plasma excited with a m=0 mod
e two-turn antenna. It was found that the characteristics of the rf pl
asma enhanced sputtering discharge were dominated by the properties of
the rf plasma sustained at pressures as low as 3x10(-2) Pa. A target
current as high as 2 A at a pressure of 0.4 Pa was achieved, and sputt
ering of the Al target indicated that a deposition rate of 1 mu m/min
could be obtained under this condition. (C) 1996 American Vacuum Socie
ty.