ANALYSIS OF ALUMINUM NITRIDE EPITAXIAL-GROWTH BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

Epitaxial growth of aluminum nitride films by low pressure metal organ ic chemical vapor deposition is modeled. The feed gas mixture consists of trimethyl aluminum, ammonia, and hydrogen. The governing fluid flo w, energy, and species conservation equations are solved numerically i n two dimensions. The effects of process variables on growth character istics is investigated in the mass transport limited regime. Results a re presented in terms of flow patterns, species distributions, and gro wth parameters for various reactor pressures and growth temperatures. In the low pressure regime (50-150 Torr) the growth rate is nearly ind ependent of temperatures between 600 and 1200 degrees C. The growth ra te increases approximately linearly with pressure at 1200 degrees C. ( C) 1996 American Vacuum Society.