Gh. Winton et al., THERMAL-STABILITY OF PHOTOCHEMICAL NATIVE-OXIDE FILMS ON HG1-XCDXTE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2325-2330
Citations number
21
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Heat treatments were carried out on native oxide films grown on Hg1-xC
dxTe by a photochemical process. The thermal stability of such layers
was assessed by monitoring changes in depth profiles obtained from x-r
ay photoelectron spectroscopy in conjunction with argon ion sputtering
. After annealing, photochemical oxides grown in N2O showed a large ch
ange in the oxide/Hg1-xCdxTe interface width and a movement of the Cd
and Te interfaces towards the oxide surface. These results are compara
ble to previous studies carried out on anodically grown oxides by othe
r workers. For photochemical oxides grown in an O-2 ambient at slightl
y higher temperatures, the oxide/Hg1-xCdxTe interface was observed to
be very stable under the same annealing conditions, with no observable
change in the oxide/Hg1-xCdxTe interface width and no movement of the
individual element interfaces. For both the N2O and O-2 grown oxides,
there was a significant loss of Hg from the oxide for extended anneal
ing at 250 degrees C in a vacuum of 10(-5) Torr. (C) 1996 American Vac
uum Society.