Y. Tsutsumi et al., MOLECULAR-BEAM SAMPLING TO ANALYZE THE REACTION-MECHANISM OF CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2337-2342
Citations number
13
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
order to understand the chemical vapor deposition (CVD) reaction mecha
nism, forming a thin him from the gas phase, it is important to identi
fy the intermediate chemical active species (radicals) for each reacti
on. Radicals generally have very short lifetimes; therefore, it is ver
y difficult to detect them. Molecular beam sampling (MBS) is a method
that can extract radicals in the gas phase using free jet expansion. A
vacuum system using a MBS method was designed to analyze the CVD reac
tion mechanism in the gas phase near the surface of the wafer. The sys
tem consists of a thermal flow-through type CVD reactor and three diff
erential pumping vacuum chambers with a quadrupole mass analyzer. The
performance of the MBS system was tested with various gases. The syste
m was applied to detect radicals produced in the region near the wafer
in a thermal TEOS/O-3 (tetraethylorthosilicate) CVD reaction to depos
it SiO2 thin films. It is proved that the radicals, from which ethoxy
bases of TEOS are extracted, are formed in the gas phase and can play
an important role in the thermal TEOS/O-3 CVD reaction. (C) 1996 Ameri
can Vacuum Society.