ELECTRONIC STATES OF A CLEAN SI(110) 16X2 SURFACE STUDIED BY ANGLE-RESOLVED PHOTOEMISSION AND SURFACE DIFFERENTIAL REFLECTIVITY

Authors
CRICENTI A NESTERENKO B PERFETTI P LELAY G SEBENNE C
Citation
A. Cricenti et al., ELECTRONIC STATES OF A CLEAN SI(110) 16X2 SURFACE STUDIED BY ANGLE-RESOLVED PHOTOEMISSION AND SURFACE DIFFERENTIAL REFLECTIVITY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2448-2453
Citations number
24
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
14
Issue
4
Year of publication
1996
Pages
2448 - 2453
Database
ISI
SICI code
0734-2101(1996)14:4<2448:ESOACS>2.0.ZU;2-K
Abstract
The electronic properties of a clean Si(110)-16x2 surface have been st udied by angle resolved ultraviolet photoelectron spectroscopy (ARUPS) and surface differential reflectivity (SDR). Four surface states have been recognized by ARUPS and their dispersions have been mapped along the main symmetry lines in the surface Brillouin zone. SDR experiment s revealed transitions between filled and empty surface states at simi lar to 1.8, 2.4, and 2.9 eV. The results have been explained on the ba sis of a new structural model of the Si(110) 16x2 phase using adatoms, rest atoms and dimers as building blocks similarly to the case of the Si(111) 7x7 dimer-adatom-stacking fault (DAS) model. (C) 1996 America n Vacuum Society.