H. Arizacalderon et al., PHOTOLUMINESCENCE MEASUREMENTS IN THE PHASE-TRANSITION REGION FOR CDSTHIN-FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2480-2482
Citations number
8
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
CdS polycrystalline thin films were grown by the chemical bath deposit
ion technique at 80 degrees C onto glass substrates. The films grow in
the cubic crystalline structure as determined by x-ray diffraction an
alysis. After thermal annealing in S-2 and Ar atmospheres, the CdS cha
nges from the metastable zinc blende phase to a stable wurtzite one. T
he cubic-to-hexagonal transition temperature has been determined to be
370 degrees C, as seen by the photoluminescence spectra and the x-ray
diffraction patterns of the different samples. These spectra show the
well-known green emission band of the CdS centered at 2.4 eV for the
as-grown sample, which shifts to 2.25 eV for the sample annealed at 36
5 degrees C just before the phase transition takes place. For the samp
le annealed at 374 degrees C, an abrupt blueshift of the green band oc
curs going back to an energy value of 2.4 eV, when the crystalline pha
se transition occurs. (C) 1996 American Vacuum Society.