MEASUREMENT OF THE ELASTIC STRESS OF THIN-FILMS DEPOSITED ON GALLIUM-ARSENIDE

We have measured the elastic stress of thin films of interest in GaAs microdevice processing, particularly for GaAs micromechanical structur e fabrication. Stress was determined for films deposited directly on G aAs, in contrast to previous studies examining depositions on other su bstrates. Stress values were evaluated from the deflection of micron-t hick GaAs cantilevers. Films examined include evaporated metals, chemi cal-vapor-deposition silicon nitride, and sputtered indium tin oxide. Stress values obtained for our films on GaAs are compared to values fo r these films deposited on other substrates.